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| 2SB1184 / 2SB1243 Transistors Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1760 / 2SD1864. External dimensions (Unit : mm) 2SB1184 1.50.3 2SB1243 C0.5 2.3 +0.2 -0.1 0.50.1 4.40.2 0.9 6.50.2 5.1 +0.2 -0.1 6.80.2 2.50.2 5.5 +0.3 -0.1 9.50.5 0.9 1.5 2.5 0.75 0.650.1 0.9 0.65Max. 1.0 Structure Epitaxial planar type PNP silicon transistor 0.550.1 2.30.2 2.30.2 1.00.2 (1) (2) (3) 2.54 2.54 0.50.1 (1) (2) (3) 1.05 14.50.5 0.450.1 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -60 -50 -5 -3 1 15 1 150 -55 to 150 Unit V V V A (DC) W W (TC=25C) W C C 1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SB1184 dissipation 2SB1243 Junction temperature Storage temperature 1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Rev.A 1/3 2SB1184 / 2SB1243 Transistors Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -5 - - - 82 - - Typ. - - - - - - - 70 50 Max. - - - -1 -1 -1 390 - - Unit V V V A A V - MHz pF IC= -50A IC= -1mA IE= -50A VCB= -40V VEB= -4V IC/IB= -2A/ -0.2A VCE= -3V, IC= -0.5A VCE= -5V, IE=0.5A, f=30MHz VCB= -10V, IE=0A, f=1MHz Conditions Packaging specifications and hFE Package Code Type 2SB1184 2SB1243 hFE PQR PQR - Basic ordering unit (pieces) TL 2500 Taping TV2 2500 - hFE values are classified as follows : Item hFE P 82 to 180 Q 120 to 270 R 180 to 390 Electrical characteristic curves -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) -2.5 -2.0 -1.5 -1.0 COLLECTOR CURRENT : IC (A) -5 -2 -1 -0.5 -0.2 -0.1 Ta=100C 25C -25C VCE= -3V -3.0 -50mA -45mA -40mA -35mA -30mA -25mA Tc=25C -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 IB=-5mA -50mA -45mA -40mA -35mA -30mA -25mA -20mA -15mA -10mA Tc=25C -20mA -15mA -10mA -0.05 -0.02 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE (V) -5mA -0.5 0 0 PC=15W -1 -2 -3 IB=0mA -4 -5 -10 -20 IB=0mA -30 -40 -50 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( ) Fig.3 Grounded emitter output characteristics ( ) Rev.A 2/3 2SB1184 / 2SB1243 Transistors 1000 500 Ta=25C 1k 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE= -3V -10 -5 -2 -1 -0.5 -0.2 -0.1 IC/IB=50/1 20/1 10/1 Ta=25C DC CURRENT GAIN : hFE 200 100 50 DC CURRENT GAIN : hFE VCE=-5V 200 100 50 20 10 5 2 Ta=100C 25C -25C -3V 20 10 5 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 -0.05 -0.02 1 -0.01 -0.02 -0.05 -0.1-0.2 -0.5 -1 -2 -5 -10 -0.01 -0.01 -0.02 -0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation voltage vs.collector current 1000 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 TRANSITION FREQUENCY : fT (MHz) lC/lB=10 500 200 100 50 20 10 5 2 1 1 2 5 10 20 Ta=25C VCE= -5V 1000 500 200 100 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 Ta= -25C 25C 100C Ta=25C f=1MHz IE=0A VBE(sat) Ta=100C 25C -25C VCE(sat) -5 -10 50 100 200 500 1000 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector base voltage -10.0 -5.0 COLLECTOR CURRENT : IC (A) -10.0 -5.0 COLLECTOR CURRENT : IC (A) IC Max. (Pulse) -2.0 -1.0 -0.5 -2.0 -1.0 -0.5 DC Tc=25C Single nonrepetitive pulse 0 =1 Pw D 10 -0.2 -0.1 C 0m s ms =10 PW 10 0m m s s -0.2 -0.1 -0.05 Tc=25C Single -0.02 nonrepetitive pulse -0.01 -0.1 -0.2 -0.5 -1 -0.05 -0.02 -0.01 -0.1-0.2 -2 -5 -10 -20 -50-100 -0.5 -1 -2 -5 -10 -20 -50-100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operation area (2SB1184) Fig.11 Safe operation area (2SB1243) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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